Deformable array of semiconductor devices

Invention Grant

US11923472B2 Deformable array of semiconductor devices 有权

Please log in to see more content

Patent Title: Deformable array of semiconductor devices
Application No.: US16668715

Application Date: 2019-10-30
Publication No.: US11923472B2

Publication Date: 2024-03-05
Inventor: Sabrina M. Curtis , Haotian Wang , Gabriel P. Anfinrud , Alexander O. Randolph , Gabriel L. Smith , Nathan S. Lazarus
Applicant: CCDC Army Research Laboratory
Applicant Address: US MD Adelphi
Assignee: The United States of America as represented by the Secretary of the Army
Current Assignee: The United States of America as represented by the Secretary of the Army
Current Assignee Address: US DC Washington
Agent Eric B. Compton
Main IPC: H01L31/05
IPC: H01L31/05 ; H01L31/0352 ; H01L31/18

Abstract:

A deformable array of semiconductor devices, and a method of manufacturing such a deformable array. The deformable array comprises a plurality of islands, where each island contains at least one semiconductor device, and the plurality of islands are arranged in an auxetic geometry.

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/042	..单个光伏电池的光伏模块或者阵列（用于光伏模块的支撑结构入H02S20/00）
H01L31/05	...光伏模块中光伏电池之间的电互连装置，例如，光伏电池的串联连接（电极入H01L 31/0224；形成在共同衬底上的薄膜太阳能电池的电互连入H01L 31/046；用于模块中相邻薄膜太阳能电池的电互连的特殊结构入H01L 31/0465；专门适用于电连接两个或多个光伏模块的电互连装置入H02S 40/36）