Invention Grant
- Patent Title: Multi-level power converters having a top and bottom high-voltage protective switches
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Application No.: US17560700Application Date: 2021-12-23
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Publication No.: US11923765B2Publication Date: 2024-03-05
- Inventor: Gregory Szczeszynski
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: JAQUEZ LAND GREENHAUS & McFARLAND LLP
- Agent John Land, Esq.
- Main IPC: H02M3/158
- IPC: H02M3/158 ; H02M1/32 ; H02M3/07

Abstract:
Circuits and methods for protecting a multi-level power converter using no more than two high-voltage FET switches while allowing all or most other power switches to be low-voltage FET switches. Some embodiments provide protective high-voltage top and bottom FETs designed to saturate before the remaining low-power FET switches saturate. Other embodiments may use only low-power FETs for the power switches but provide protective circuits configured to be in an always-ON (conducting) state when in normal power conversion operation, and to quickly switch to an OFF (non-conducting) state in the event of transients or a fault condition. Optionally, one or more of the protective circuits may be used in a controlled manner to limit or block current flow during certain types of fault conditions and/or to limit in-rush current during startup of a power converter.
Public/Granted literature
- US20230136027A1 Protecting Multi-Level Power Converters Public/Granted day:2023-05-04
Information query
IPC分类: