Invention Grant
- Patent Title: Capacitor array structure and method for forming the same
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Application No.: US17310416Application Date: 2021-03-01
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Publication No.: US11925012B2Publication Date: 2024-03-05
- Inventor: Chaojun Sheng , Wenjia Hu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2010169180.1 2020.03.12
- International Application: PCT/CN2021/078406 2021.03.01
- International Announcement: WO2021/179926A 2021.09.16
- Date entered country: 2021-08-01
- Main IPC: H10B12/00
- IPC: H10B12/00 ; H01L21/768 ; H01L23/522 ; H01L49/02 ; H01L27/08

Abstract:
A method for forming a capacitor array structure includes the following steps: providing a substrate, a capacitor contact being exposed on a surface of the substrate, and the substrate including an array region and a peripheral region; forming a bottom supporting layer covering the substrate and the capacitor contact, the bottom supporting layer having a gap therein; forming a filling layer filling the gap and covering the capacitor contact and the surface of the bottom supporting layer, a thickness of the filling layer located at the peripheral region being larger than that of the filling layer located at the array region; forming supporting layers and sacrificial layers alternately stacked in a direction perpendicular to the substrate; forming a capacitor hole; sequentially forming a lower electrode layer on an inner wall of the capacitor hole.
Public/Granted literature
- US20220320095A1 CAPACITOR ARRAY STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2022-10-06
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