Invention Grant
- Patent Title: Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping
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Application No.: US17217766Application Date: 2021-03-30
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Publication No.: US11925124B2Publication Date: 2024-03-05
- Inventor: Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Mahesh Samant , Ikhtiar , Dmytro Apalkov
- Applicant: Samsung Electronics Co., Ltd. , INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: KR NY Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H10N50/80
- IPC: H10N50/80 ; G11C11/16 ; H01F10/193 ; H01F10/30 ; H01F10/32 ; H10B61/00 ; H10N50/01 ; H10N50/10 ; H10N50/85

Abstract:
A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.
Public/Granted literature
- US20220223783A1 INSERTION LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER LAYERS WITH REDUCED MAGNETIC DAMPING Public/Granted day:2022-07-14
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