Invention Grant
- Patent Title: Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devices
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Application No.: US17668448Application Date: 2022-02-10
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Publication No.: US11929420B2Publication Date: 2024-03-12
- Inventor: Daniel J. Lichtenwalner
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/16 ; H01L29/40 ; H01L29/78
Abstract:
A semiconductor device includes a semiconductor layer structure that comprises silicon carbide, a gate dielectric layer on the semiconductor layer structure, the gate dielectric layer including a base gate dielectric layer that is on the semiconductor layer structure and a capping gate dielectric layer on the base gate dielectric layer opposite the semiconductor layer structure, and a gate electrode on the gate dielectric layer opposite the semiconductor layer structure. A dielectric constant of the capping gate dielectric layer is higher than a dielectric constant of the base gate dielectric layer.
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