- Patent Title: Etching platinum-containing thin film using protective cap layer
-
Application No.: US17347715Application Date: 2021-06-15
-
Publication No.: US11929423B2Publication Date: 2024-03-12
- Inventor: Sebastian Meier , Helmut Rinck , Mike Mittelstaedt
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Yudong Kim; Frank D. Cimino
- The original application number of the division: US16688060 2019.11.19
- Main IPC: H01L29/66
- IPC: H01L29/66 ; C01G55/00 ; H01L21/02 ; H01L21/263 ; H01L21/28 ; H01L21/285 ; H01L21/311 ; H01L21/3213 ; H01L21/768 ; H01L23/00 ; H01L23/532 ; H01L29/49 ; H01L29/78 ; H01L49/02 ; H01L21/8238
Abstract:
A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.
Public/Granted literature
- US20210313179A1 ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER Public/Granted day:2021-10-07
Information query
IPC分类:
