High ruggedness heterojunction bipolar transistor (HBT)

Invention Grant

US11929427B2 High ruggedness heterojunction bipolar transistor (HBT) 有权

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Patent Title: High ruggedness heterojunction bipolar transistor (HBT)
Application No.: US17148709

Application Date: 2021-01-14
Publication No.: US11929427B2

Publication Date: 2024-03-12
Inventor: Chao-Hsing Huang , Yu-Chung Chin , Kai-Yu Chen
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Applicant Address: TW Taoyuan
Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.
Current Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.
Current Assignee Address: TW Taoyuan
Agency: Patentrant Consulting Group
Priority: TW 9101244 2020.01.14
Main IPC: H01L29/73
IPC: H01L29/73 ; H01L23/66 ; H01L29/08 ; H01L29/205 ; H01L29/737 ; H03F3/19 ; H03F3/21

Abstract:

Provided is a high ruggedness heterojunction bipolar transistor (HBT), including a collector layer. The collector layer includes a InGaP layer or a wide bandgap layer. The bandgap of the InGaP layer is greater than 1.86 eV.

Public/Granted literature

US20210217881A1 HIGH RUGGEDNESS HETERJUNCTION BIPOLAR TRANSISTOR (HBT) Public/Granted day:2021-07-15

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的
H01L29/73	.....双极结型晶体管