Invention Grant
- Patent Title: Systems and methods for production of silicon using a horizontal magnetic field
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Application No.: US17658049Application Date: 2022-04-05
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Publication No.: US11932962B2Publication Date: 2024-03-19
- Inventor: JaeWoo Ryu , JunHwan Ji , WooJin Yoon , Richard J. Phillips , Carissima Marie Hudson
- Applicant: GlobalWafers Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: GlobalWafers Co., Ltd.
- Current Assignee: GlobalWafers Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Armstrong Teasdale LLP
- The original application number of the division: US17115154 2020.12.08
- Main IPC: C30B15/10
- IPC: C30B15/10 ; C30B15/20 ; C30B15/30 ; C30B29/06 ; C30B30/04

Abstract:
A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.
Public/Granted literature
- US20220228291A1 SYSTEMS AND METHODS FOR PRODUCTION OF SILICON USING A HORIZONTAL MAGNETIC FIELD Public/Granted day:2022-07-21
Information query
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