An assembly of an active semiconductor component and of a silicon-based passive optical component includes a carrier; and the active semiconductor component and the passive optical component both arranged on the carrier. The active semiconductor component includes a first set of semiconductor layers comprising at least one first waveguide configured to guide, in a first section of the assembly, at least one first optical mode; a second set of semiconductor layers, the set being superposed and making contact with the first set of layers, and including at least one second waveguide configured to guide at least one second optical mode. At least some of the layers of the first set of layers and of the second set of layers are doped to form, in a first region of the component, a PIN diode. The at least one first waveguide and the at least one second waveguide are configured to allow evanescent coupling therebetween, in a second section of the assembly. The first set of layers is etched to form, in a second region of the active semiconductor component, a first surface flush with the second waveguide. The passive component includes a substrate; a set of silicon-compound layers comprising at least one waveguide configured to guide at least one optical mode. The at least one waveguide lies flush with a first surface of the set of layers, which surface is opposite a second surface of the set of layers making contact with a surface of the substrate. The first surface of the passive optical component makes contact with the first surface of the active semiconductor component in order to allow evanescent coupling between the at least one waveguide of the passive optical component and the at least one second waveguide of the active semiconductor component.