Invention Grant
- Patent Title: Method of annealing reflective photomask by using laser
-
Application No.: US18048949Application Date: 2022-10-24
-
Publication No.: US11934092B2Publication Date: 2024-03-19
- Inventor: Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR 20200008564 2020.01.22
- Main IPC: G03F1/24
- IPC: G03F1/24 ; B23K26/06 ; H01L21/268

Abstract:
A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
Public/Granted literature
- US20230073206A1 METHOD OF ANNEALING REFLECTIVE PHOTOMASK BY USING LASER Public/Granted day:2023-03-09
Information query