- Patent Title: Method and apparatus for testing memory chip, and storage medium
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Application No.: US17663767Application Date: 2022-05-17
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Publication No.: US11934683B2Publication Date: 2024-03-19
- Inventor: Dong Liu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2210198602.7 2022.03.02
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
The present disclosure provides a method and an apparatus for testing a memory chip, and a storage medium, and belongs to the technical field of semiconductors. The method for testing a memory chip includes: writing test data into a memory cell of a to-be-tested memory chip; reading stored data from the memory cell; and generating a test result of the to-be-tested memory chip based on the test data and the stored data; wherein in the reading stored data from the memory cell, a row address strobe precharge time is less than a standard row address strobe precharge time of the to-be-tested memory chip, and/or a current sensing delay time of the to-be-tested memory chip is less than a standard sensing delay time of the to-be-tested memory chip.
Public/Granted literature
- US20230280927A1 METHOD AND APPARATUS FOR TESTING MEMORY CHIP, AND STORAGE MEDIUM Public/Granted day:2023-09-07
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