Invention Grant
- Patent Title: Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
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Application No.: US17889054Application Date: 2022-08-16
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Publication No.: US11935762B2Publication Date: 2024-03-19
- Inventor: Daigi Kamimura , Tomoshi Taniyama , Kenji Shirako , Hironori Shimada , Akira Horii , Takayuki Nakada , Norihiro Yamashima
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP 20057564 2020.03.27
- Main IPC: H01L21/67
- IPC: H01L21/67 ; C23C16/44 ; C23C16/458 ; C23C16/46 ; H01J37/32

Abstract:
There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.
Public/Granted literature
- US20220392783A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM Public/Granted day:2022-12-08
Information query
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