Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17365100Application Date: 2021-07-01
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Publication No.: US11935813B2Publication Date: 2024-03-19
- Inventor: Ryoichi Kato , Tatsuhiko Asai , Kento Shirata
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agent Manabu Kanesaka
- Priority: JP 20116687 2020.07.06
- Main IPC: H01L23/36
- IPC: H01L23/36 ; H01L23/40 ; H01L23/498 ; H01L25/065

Abstract:
A semiconductor device includes a semiconductor module having a wiring board, semiconductor assemblies that include a multilayer substrate on which semiconductor elements are mounted, and a sealing part; a cooler; and a heat conduction sheet which is placed between the semiconductor module and the mounting surface of the cooler and which is in contact with the bottom surfaces of the multilayer substrates. The heat conduction sheet has recesses corresponding to at least parts of the outer edges of second electrically conductive plates provided on the bottoms of the multilayer substrates.
Public/Granted literature
- US20220005745A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-01-06
Information query
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