Invention Grant
- Patent Title: Resistor within a via
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Application No.: US17446405Application Date: 2021-08-30
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Publication No.: US11935829B2Publication Date: 2024-03-19
- Inventor: Chi-Han Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/321 ; H01L21/768 ; H01L23/532 ; H01L49/02
Abstract:
In some implementations, one or more semiconductor processing tools may form a via for a semiconductor device. The one or more semiconductor processing tools may deposit a metal plug within the via. The one or more semiconductor processing tools may deposit an oxide-based layer on the metal plug within the via. The one or more semiconductor processing tools may deposit a resistor on the oxide-based layer within the via. The one or more semiconductor processing tools may deposit a first landing pad and a second landing pad on the resistor within the via. The one or more semiconductor processing tools may deposit a first metal plug on the first landing pad and a second metal plug on the second landing pad.
Public/Granted literature
- US20230061124A1 RESISTOR WITHIN A VIA Public/Granted day:2023-03-02
Information query
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