Invention Grant
- Patent Title: Dielectric thin film, memcapacitor including the same, cell array including the same, and manufacturing method thereof
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Application No.: US17445432Application Date: 2021-08-19
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Publication No.: US11935915B2Publication Date: 2024-03-19
- Inventor: Sanghan Lee , Hyunji An , Jiwoong Yang
- Applicant: Gwangju Institute of Science and Technology
- Applicant Address: KR Gwangju
- Assignee: Gwangji Institute of Science and Technology
- Current Assignee: Gwangji Institute of Science and Technology
- Current Assignee Address: KR Gwangju
- Agency: FINCH & MALONEY PLLC
- Priority: KR 20190146858 2019.11.15
- The original application number of the division: US16691904 2019.11.22
- Main IPC: H10N70/20
- IPC: H10N70/20 ; H01L49/02 ; H10N70/00
Abstract:
Provided is a memcapacitor. The memcapacitor includes: a first electrode having a metal-doped perovskite composition; a second electrode disposed on the first electrode; and a dielectric thin film having a perovskite composition, disposed between the first electrode and the second electrode, and having a variable dielectric constant depending on a voltage between the first electrode and the second electrode.
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