Invention Grant
- Patent Title: Low temperature methods for depositing inorganic particles on a metal substrate and articles produced by the same
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Application No.: US17279434Application Date: 2019-09-20
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Publication No.: US11939670B2Publication Date: 2024-03-26
- Inventor: Hoon Kim , Charles Andrew Paulson
- Applicant: CORNING INCORPORATED
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Russell S. Magaziner
- International Application: PCT/US2019/052139 2019.09.20
- International Announcement: WO2020/068579A 2020.04.02
- Date entered country: 2021-03-24
- Main IPC: C23C16/36
- IPC: C23C16/36 ; C23C16/46 ; C23C16/52 ; B28B3/26 ; C22C38/02 ; C22C38/04 ; C22C38/42 ; C22C38/44 ; C22C38/46 ; C22C38/52

Abstract:
Methods for depositing inorganic particles including titanium carbonitride on a metal substrate via chemical vapor deposition (CVD). In some embodiments, the CVD process may be supplied by two or more source gasses that react to form the inorganic particles. At least one of the sources gases includes a titanium source gas. And a source of carbon and nitrogen may be (a) a single source gas including a carbon and nitrogen source gas with a heat of formation energy that is less than 65.9 kilojoules per mole and/or (b) two source gases including a carbon source gas with a gas molecule having a carbon-nitrogen single bond and a nitrogen source gas. In some embodiments, the CVD process may be supplied by a source gas including a metalorganic compound to form the inorganic particles. In some embodiments, the CVD process may be supplied by an aluminum-containing metalorganic reducing agent.
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