Invention Grant
- Patent Title: High power device fault localization via die surface contouring
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Application No.: US16950855Application Date: 2020-11-17
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Publication No.: US11940271B2Publication Date: 2024-03-26
- Inventor: David J. Lewison , Jay A. Bunt , Frank L. Pompeo , Richard Walter Oldrey , John D. Sylvestri , Phong T. Tran
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Grant M. McNeilly
- Main IPC: G01B5/20
- IPC: G01B5/20 ; G01B5/06 ; G01B5/30 ; H01L21/67
Abstract:
A method of preparing a computer processor die includes determining a warpage shape of the computer processor die at a testing temperature. The method also includes selectively contouring a thickness of the computer processor die at a contouring temperature by physically removing material from a surface of the computer processor die such that the surface will be substantially flat at the testing temperature.
Public/Granted literature
- US20220155049A1 HIGH POWER DEVICE FAULT LOCALIZATION VIA DIE SURFACE CONTOURING Public/Granted day:2022-05-19
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