Micromechanical pressure sensor device and a corresponding production method
Abstract:
A micromechanical pressure sensor device including a semiconductor base substrate of a first doping type on which an intermediate layer of the first doping type is situated, a cavity sealed by a sealing layer of a second doping type and including a reference pressure, a first grating of the second doping type, suspended inside the cavity on a buried connection region of the second doping type, the buried connection region laterally extending away from the cavity into the semiconductor base material, a second grating of the second doping type, situated on a side of the diaphragm region pointing to the cavity and suspended on the diaphragm region, the first grating and the second grating being electrically insulated from each other and forming a capacitance, a first connection electrically connected to the first grating via the buried connection region, and a second connection electrically connected to the second grating.
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