Invention Grant
- Patent Title: Zoned memory device recovery after a key-value store failure
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Application No.: US18111964Application Date: 2023-02-21
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Publication No.: US11941258B2Publication Date: 2024-03-26
- Inventor: Pierre Labat , Nabeel Meeramohideen Mohamed , Steven Moyer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: LOWENSTEIN SANDLER LLP
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A system includes a memory device, and a processing device, operatively coupled with the memory device, to perform operations including detecting a failure of a key-value store, identifying a non-filled zone of the memory device resulting from the failure, wherein the non-filled zone stores, in the key-value store, at least one of: an uncommitted key block or an uncommitted value block, and recovering the non-filled zone to obtain a recovered zone.
Public/Granted literature
- US20230195330A1 ZONED MEMORY DEVICE RECOVERY AFTER A KEY-VALUE STORE FAILURE Public/Granted day:2023-06-22
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