Invention Grant
- Patent Title: Embedded structure, manufacturing method thereof and substrate
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Application No.: US17388099Application Date: 2021-07-29
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Publication No.: US11942465B2Publication Date: 2024-03-26
- Inventor: Xianming Chen , Bingsen Xie , Benxia Huang , Lei Feng , Wenshi Wang
- Applicant: Zhuhai ACCESS Semiconductor Co., Ltd
- Applicant Address: CN Zhuhai
- Assignee: Zhuhai ACCESS Semiconductor Co., Ltd.
- Current Assignee: Zhuhai ACCESS Semiconductor Co., Ltd.
- Current Assignee Address: CN Zhuhai
- Agency: Grossman, Tucker, Perreault & Pfleger PLLC
- Agent Paul J. Kroon, Jr.
- Priority: CN 2010847366.8 2020.08.21
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L21/56 ; H01L23/00 ; H01L23/31 ; H01L25/065

Abstract:
Disclosed is a manufacturing method for an embedded structure. The method includes: preparing a temporary carrier board; preparing a second circuit layer on at least one of the upper surface and the lower surface of the temporary carrier board, and preparing a first dielectric layer to cover the second circuit layer; patterning and curing the first dielectric layer to form a cavity, mounting a device in the cavity, and performing hot-curing, wherein a surface of the device provided with a terminal faces an opening of the cavity; and preparing a second dielectric layer, wherein the device is embedded in the second dielectric layer, and a surface of the second dielectric layer is higher than a surface of the terminal by a preset value.
Public/Granted literature
- US20220059520A1 EMBEDDED STRUCTURE, MANUFACTURING METHOD THEREOF AND SUBSTRATE Public/Granted day:2022-02-24
Information query
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