Invention Grant
- Patent Title: Semiconductor structure, electronic device, and method of manufacturing semiconductor structure
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Application No.: US17351240Application Date: 2021-06-18
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Publication No.: US11942467B2Publication Date: 2024-03-26
- Inventor: I-Sheng Chen , Yi-Jing Li , Chia-Ming Hsu , Wan-Lin Tsai , Clement Hsingjen Wann
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01L21/70 ; H01L27/01 ; H01L49/02

Abstract:
A semiconductor structure includes a first metal-dielectric-metal layer, a first dielectric layer, a first conductive layer, a second conductive layer, and a second dielectric layer. The first metal-dielectric-metal layer includes a plurality of first fingers, a plurality of second fingers, and a first dielectric material. The first fingers are electrically connected to a first voltage. The second fingers are electrically connected to a second voltage different from the first voltage, and the first fingers and the second fingers are arranged in parallel and staggeredly. The first dielectric material is between the first fingers and the second fingers. The first dielectric layer is over the first metal-dielectric-metal layer. The first conductive layer is over the first dielectric layer. The second conductive layer is over the first conductive layer. The second dielectric layer is between the first conductive layer and the second conductive layer.
Public/Granted literature
- US20220406768A1 SEMICONDUCTOR STRUCTURE, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2022-12-22
Information query
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