A termination structure in which a semiconductor active region is surrounded with a guard ring and capable of preventing corrosion of a metal layer connected to the guard ring includes: an active region and a guard ring region surrounding the active region. A guard ring is formed on the semiconductor substrate, and an interlayer insulating film is formed on the semiconductor substrate so as to cover the guard ring. A field plate is disposed on the interlayer insulating film and is electrically connected to the guard ring via a contact penetrating the interlayer insulating film. A protective film covers the field plate, which has a laminated structure including a first metal in contact with the guard ring and a second metal which is disposed in contact with the first metal and has a lower standard potential than the first metal.