Invention Grant
- Patent Title: Fin field-effect transistor and method of forming the same
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Application No.: US17461135Application Date: 2021-08-30
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Publication No.: US11942532B2Publication Date: 2024-03-26
- Inventor: Chao-Hsuan Chen , Ming-Chia Tai , Yu-Hsien Lin , Shun-Hui Yang , Ryan Chia-Jen Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: FOLEY & LARDNER LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L29/49 ; H01L29/78
Abstract:
A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.
Public/Granted literature
- US20230062257A1 FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME Public/Granted day:2023-03-02
Information query
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