Invention Grant
- Patent Title: Silicon carbide semiconductor device
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Application No.: US17427129Application Date: 2020-01-22
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Publication No.: US11942538B2Publication Date: 2024-03-26
- Inventor: Takeyoshi Masuda , Yu Saitoh
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: McCarter & English, LLP
- Agent Michael A. Sartori
- Priority: JP 19017745 2019.02.04
- International Application: PCT/JP2020/002095 2020.01.22
- International Announcement: WO2020/162175A 2020.08.13
- Date entered country: 2021-07-30
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/16

Abstract:
In the direction from the first main surface toward the second main surface through each of the second impurity region and the fourth impurity region, a concentration profile of an n-type impurity has a second relative maximum value and a fourth relative maximum value located closer to the first main surface than a position where the second relative maximum value is exhibited. The fourth relative maximum value is larger than the third relative maximum value, the third relative maximum value is larger than the second relative maximum value, and the second relative maximum value is larger than the first relative maximum value.
Public/Granted literature
- US20220149197A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2022-05-12
Information query
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