Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US16416420Application Date: 2019-05-20
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Publication No.: US11942540B2Publication Date: 2024-03-26
- Inventor: Meng Wang , Yicheng Du , Hui Yu
- Applicant: Silergy Semiconductor Technology (Hangzhou) LTD
- Applicant Address: CN Hangzhou
- Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
- Current Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
- Current Assignee Address: CN Hangzhou
- Priority: CN 1810538418.6 2018.05.30
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L21/8238 ; H01L27/088 ; H01L27/092 ; H01L29/06 ; H01L29/10 ; H01L29/66
Abstract:
A semiconductor device having an LDMOS transistor can include: a first deep well region having a first doping type; a drift region located in the first deep well region and having a second doping type; and a drain region located in the drift region and having the second doping type, where the second doping type is opposite to the first doping type, and where a doping concentration peak of the first deep well region is located below the drift region to optimize the breakdown voltage and the on-resistance of the LDMOS transistor.
Information query
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