Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US18064562Application Date: 2022-12-12
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Publication No.: US11942549B2Publication Date: 2024-03-26
- Inventor: Wan-Yi Kao , Yu-Cheng Shiau , Chunyao Wang , Chih-Tang Peng , Yung-Cheng Lu , Chi On Chui
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L21/762 ; H01L21/8234 ; H01L27/092 ; H01L29/51 ; H01L29/66
Abstract:
A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.
Public/Granted literature
- US3131738A Apparatus for the removal of seed coats and other foreign matter from nuts Public/Granted day:1964-05-05
Information query
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