Invention Grant
- Patent Title: Semiconductor device, display device including the semiconductor device, and an electronic device including the semiconductor device
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Application No.: US17585645Application Date: 2022-01-27
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Publication No.: US11942554B2Publication Date: 2024-03-26
- Inventor: Yasuharu Hosaka , Yukinori Shima , Masataka Nakada , Masami Jintyou
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP 15227617 2015.11.20 JP 15237207 2015.12.04
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L21/426 ; H01L27/12 ; H01L29/04 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L29/786 ; G02F1/1368 ; H10K50/115 ; H10K59/12 ; H10K59/40
Abstract:
In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.
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