Invention Grant
- Patent Title: Semiconductor laser device manufacturing method
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Application No.: US17424869Application Date: 2019-03-18
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Publication No.: US11942758B2Publication Date: 2024-03-26
- Inventor: Shinji Abe
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2019/011157 2019.03.18
- International Announcement: WO2020/188695A 2020.09.24
- Date entered country: 2021-07-21
- Main IPC: H01S5/0235
- IPC: H01S5/0235 ; H01S5/023 ; H01S5/02345 ; H01S5/028

Abstract:
A manufacturing method comprises: a material preparation step of forming a metal layer on a front side surface of a submount bar body which is to face a laser bar on which a front side electrode and a back side electrode are formed, to prepare a submount bar on which the laser bar is to be mounted; a jig installation step of installing the submount bar and the laser bar that are provided in plural number alternately stacked each other on an installation jig; a bonding step of bonding the metal layer and the back side electrode by increasing the temperature of the installation jig; and a protective film forming step of forming a protective film on cleaved end faces of the laser bar in a protective film forming apparatus using the installation jig in which the submount bars and the laser bars are installed, after the bonding step.
Public/Granted literature
- US20220094136A1 SEMICONDUCTOR LASER DEVICE MANUFACTURING METHOD Public/Granted day:2022-03-24
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