Invention Grant
- Patent Title: Film bulk acoustic resonator and fabrication method thereof
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Application No.: US17249391Application Date: 2021-03-01
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Publication No.: US11942917B2Publication Date: 2024-03-26
- Inventor: Guohuang Yang
- Applicant: Ningbo Semiconductor International Corporation
- Applicant Address: CN Ningbo
- Assignee: Ningbo Semiconductor International Corporation
- Current Assignee: Ningbo Semiconductor International Corporation
- Current Assignee Address: CN Ningbo
- Agency: Anova Law Group, PLLC
- Priority: CN 1910657440.7 2019.07.19
- Main IPC: H03H3/02
- IPC: H03H3/02 ; H03H9/05 ; H03H9/17

Abstract:
The present disclosure provides a film bulk acoustic resonator and its fabrication method. The fabrication method includes providing a first substrate, and sequentially forming a first electrode layer, a piezoelectric material layer, and a second electrode layer, on the first substrate; forming a support layer on the second electrode layer and forming a cavity with a top opening in the support layer, where the cavity passes through the support layer; providing a second substrate and bonding the second substrate with the support layer; removing the first substrate; and patterning the first electrode layer, the piezoelectric material layer, and the second electrode layer to form a first electrode, a piezoelectric layer, and a second electrode.
Public/Granted literature
- US20210184643A1 FILM BULK ACOUSTIC RESONATOR AND FABRICATION METHOD THEREOF Public/Granted day:2021-06-17
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