Invention Grant
- Patent Title: Resistive memory with a switching zone between two dielectric regions having different doping and/or dielectric constants
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Application No.: US17446328Application Date: 2021-08-30
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Publication No.: US11944022B2Publication Date: 2024-03-26
- Inventor: Laurent Grenouillet , Marios Barlas , Etienne Nowak
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR 08916 2020.09.02
- Main IPC: H10N70/00
- IPC: H10N70/00 ; G11C13/00 ; H10B63/00
Abstract:
A resistive memory cell may be provided with a first electrode and a second electrode arranged on either side of a dielectric layer and facing an interface between a first region and a second region, The first and second region may have different compositions in terms of doping and/or dielectric constant, so as to confine the zone of reversible creation of a conductive filament at the interface.
Public/Granted literature
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