Invention Grant
- Patent Title: Chalcogenide sputtering target and method of making the same
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Application No.: US17114216Application Date: 2020-12-07
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Publication No.: US11946132B2Publication Date: 2024-04-02
- Inventor: Michael R. Pinter
- Applicant: Honeywell International Inc.
- Applicant Address: US NJ Morris Plains
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NC Charlotte
- Agency: Faegre Drinker Biddle & Reath LLP
- The original application number of the division: US15670487 2017.08.07
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C04B35/547 ; C04B35/653 ; C22C1/00 ; C23C14/06 ; H01J37/34

Abstract:
In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.
Public/Granted literature
- US20210095370A1 CHALCOGENIDE SPUTTERING TARGET AND METHOD OF MAKING THE SAME Public/Granted day:2021-04-01
Information query
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