Invention Grant
- Patent Title: Method for making photolithography mask plate
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Application No.: US17150220Application Date: 2021-01-15
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Publication No.: US11947261B2Publication Date: 2024-04-02
- Inventor: Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing; TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN 1611095319.2 2016.12.01
- Main IPC: G03F1/50
- IPC: G03F1/50 ; G03F1/00 ; G03F1/48 ; G03F7/20 ; G03F7/30

Abstract:
A method of making photolithography mask plate is provided. The method includes: providing a carbon nanotube layer on a substrate; depositing a chrome layer on the carbon nanotube layer, wherein the chrome layer includes a first patterned chrome layer and a second patterned chrome layer, the first patterned chrome layer is located on the carbon nanotube layer, and the second patterned chrome layer is deposited on the substrate corresponding to holes of the carbon nanotube layer; transferring the carbon nanotube layer with the first patterned chrome layer thereon from the substrate to a base, and the carbon nanotube layer being in contact with the base; and depositing a cover layer on the first patterned chrome layer.
Public/Granted literature
- US20210132500A1 METHOD FOR MAKING PHOTOLITHOGRAPHY MASK PLATE Public/Granted day:2021-05-06
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