Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
-
Application No.: US18316531Application Date: 2023-05-12
-
Publication No.: US11947422B2Publication Date: 2024-04-02
- Inventor: Kenichiro Yoshii , Shinichi Kanno
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 19024588 2019.02.14
- The original application number of the division: US16561399 2019.09.05
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F3/06 ; G06F12/1009

Abstract:
According to one embodiment, a nonvolatile semiconductor memory device is connectable to a controller. The nonvolatile semiconductor memory device includes a cell array and a control circuit. The cell array includes a plurality of blocks. The control circuit executes program operations for a plurality of pages included in a write destination block of the blocks, in a certain program order. The write destination block is selected by the controller from the blocks. The control circuit is configured to notify a page address corresponding to a next program operation with respect to the write destination block to the controller.
Public/Granted literature
- US20230281078A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2023-09-07
Information query