Invention Grant
- Patent Title: Configurable memory die capacitance
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Application No.: US16976286Application Date: 2019-08-29
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Publication No.: US11947813B2Publication Date: 2024-04-02
- Inventor: Jingwei Cheng , Cheng Zhang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- International Application: PCT/CN2019/103342 2019.08.29
- International Announcement: WO2021/035626A 2021.03.04
- Date entered country: 2020-08-27
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F13/16 ; G11C7/10

Abstract:
Methods, systems, and devices for configurable memory die capacitance are described. A memory device may include a capacitive component, which may include one or more capacitors and associated switching components. The capacitive component may be coupled with an input/output (I/O) pad and an associated input buffer, and the one or more capacitors of the capacitive component may be selectively couplable with the I/O pad via the switching components. Switching components may be activated individually, in coordination, or not at all, such that one, multiple, or none of the capacitors may be coupled with the I/O pad. The capacitive component, I/O pad, and input buffer may be included in a same die of the memory device. In some cases, a configuration of the capacitive component may be based on signaling received from a host device.
Public/Granted literature
- US20230118874A1 CONFIGURABLE MEMORY DIE CAPACITANCE Public/Granted day:2023-04-20
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