Invention Grant
- Patent Title: Inter-die refresh control
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Application No.: US17513311Application Date: 2021-10-28
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Publication No.: US11947840B2Publication Date: 2024-04-02
- Inventor: Kang-Yong Kim , Hyun Yoo Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Colby Nipper PLLC
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/406

Abstract:
Described systems, apparatuses, and methods relate to volatile memories that are refreshed to maintain data integrity, such as dynamic random-access memory (DRAM) and synchronous DRAM (SDRAM). A memory device includes multiple dies, with each die having a memory array to be refreshed. The multiple dies may be interconnected via at least one inter-die bus of the memory device. A memory controller sends a command to the memory device to enter a self-refresh mode. In response, a die of the multiple dies can enter the self-refresh mode and initiate or otherwise coordinate refresh operations of the other dies. To do so, the die may transmit at least one refresh-related command to at least one other die using the inter-die bus. Multiple different signaling schemes and timing approaches are disclosed. The described inter-die refresh control principles may be implemented in energy-efficient applications, such as in low-power double data rate (LPDDR) SDRAM.
Public/Granted literature
- US20220137881A1 Inter-Die Refresh Control Public/Granted day:2022-05-05
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