Invention Grant
- Patent Title: Semiconductor memory
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Application No.: US18305654Application Date: 2023-04-24
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Publication No.: US11948646B2Publication Date: 2024-04-02
- Inventor: Kosuke Yanagidaira , Mario Sako
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 18151665 2018.08.10
- The original application number of the division: US16286538 2019.02.26
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/56 ; G11C16/04 ; G11C16/08 ; G11C16/24 ; G11C16/26 ; G11C16/30

Abstract:
A semiconductor memory includes memory cells, a word line and bit lines of the memory cells, sense amplifiers connected to the bit lines, respectively, and a controller. Each sense amplifier includes first, second, and third transistors. The third transistor has one end connected to each of the first and second transistors, and the other end connected to a corresponding bit line. During a read operation, at a first time of a first period during which the controller applies a first read voltage to the word line, the controller applies a first voltage higher than ground voltage to the first transistor, and a second voltage to the second transistor. Also, at the first time, a first sense amplifier applies a voltage to a first bit line through its first and third transistors, and a second sense amplifier applies a voltage to a second bit line through tis second and third transistors.
Public/Granted literature
- US20230260579A1 SEMICONDUCTOR MEMORY Public/Granted day:2023-08-17
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