Invention Grant
- Patent Title: Component for plasma processing apparatus and plasma processing apparatus
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Application No.: US17605967Application Date: 2020-04-20
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Publication No.: US11948779B2Publication Date: 2024-04-02
- Inventor: Kazuhiro Ishikawa , Takashi Hino , Shuichi Saito
- Applicant: KYOCERA Corporation
- Applicant Address: JP Kyoto
- Assignee: KYOCERA Corporation
- Current Assignee: KYOCERA Corporation
- Current Assignee Address: JP Kyoto
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: JP 19085665 2019.04.26
- International Application: PCT/JP2020/017109 2020.04.20
- International Announcement: WO2020/218265A 2020.10.29
- Date entered country: 2021-10-22
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C01F17/218 ; C23C14/08 ; C23C14/34

Abstract:
A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.
Public/Granted literature
- US20220181123A1 COMPONENT FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS Public/Granted day:2022-06-09
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