Embodiments of a glass wafer for semiconductor fabrication processes are described herein. In some embodiments, a glass wafer includes: a glass substrate comprising: a top surface, a bottom surface opposing the top surface, and an edge surface between the top surface and the bottom surface; a first coating disposed atop the glass substrate, wherein the first coating is a doped crystalline silicon coating having a sheet-resistance of 100 to 1,000,000 ohm per square; and a second coating having one or more layers disposed atop the glass substrate, wherein the second coating comprises a silicon containing coating, wherein the glass wafer has an average transmittance (T) of less than 50% over an entire wavelength range of 400 nm to 1000 nm.