Invention Grant
- Patent Title: Methods for passivating sidewalls of semiconductor wafers and semiconductor devices incorporating semiconductor wafers
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Application No.: US17410432Application Date: 2021-08-24
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Publication No.: US11948803B2Publication Date: 2024-04-02
- Inventor: Riina Ulkuniemi , Ville Vilokkinen , Petri Melanen
- Applicant: Modulight Corporation
- Applicant Address: FI Tampere
- Assignee: Modulight Oy
- Current Assignee: Modulight Oy
- Current Assignee Address: FI Tampere
- Agency: Ziegler IP Law Group
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/027 ; H01L21/3065 ; H01L21/311
Abstract:
A method for passivating sidewalls of patterned semiconductor wafer including ridge(s). The method includes: depositing first layer of first dielectric material on pattern surface of said wafer; etching portion of first layer to obtain tapered portions of first dielectric material along sidewall(s) of ridge(s); depositing second layer of second dielectric material on tapered portions and said wafer; depositing photo-sensitive material on second layer; aligning mask with photo-sensitive material, wherein portion(s) of photo-sensitive material corresponding to top surface of ridge(s) is/are unmasked, and remaining portion is masked; applying developing solution and exposing photo-sensitive material to remove portion(s) of photo-sensitive material; etching portion(s) of second layer that is/are deposited on top surface of ridge(s); and removing photo-sensitive material.
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