Invention Grant
- Patent Title: Apparatus for processing substrates or wafers
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Application No.: US15906689Application Date: 2018-02-27
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Publication No.: US11948810B2Publication Date: 2024-04-02
- Inventor: Li-Chao Yin , Yuling Chiu , Yu-Lung Yang , Hung-Bin Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: STUDEBAKER & BRACKETT PC
- Main IPC: H01L21/67
- IPC: H01L21/67

Abstract:
A vacuum apparatus includes process chambers, and a transfer chamber coupled to the process chambers. The transfer chamber includes one or more vacuum ports, thorough which a gas inside the transfer chamber is exhausted, and vent ports, from which a vent gas is supplied. The one or more vacuum ports and the vent ports are arranged such that air flows from at least one of the vent ports to the one or more vacuum ports are line-symmetric with respect to a center line of the transfer chamber.
Public/Granted literature
- US20190148177A1 APPARATUS FOR PROCESSING SUBSTRATES OR WAFERS Public/Granted day:2019-05-16
Information query
IPC分类: