Invention Grant
- Patent Title: High thermal conductivity boron arsenide for thermal management, electronics, optoelectronics, and photonics applications
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Application No.: US16967362Application Date: 2019-02-01
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Publication No.: US11948858B2Publication Date: 2024-04-02
- Inventor: Yongjie Hu , Joon Sang Kang
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Foley & Lardner LLP
- International Application: PCT/US2019/016255 2019.02.01
- International Announcement: WO2019/152782A 2019.08.08
- Date entered country: 2020-08-04
- Main IPC: H01L23/373
- IPC: H01L23/373 ; C30B25/02 ; C30B29/40 ; H01L21/02 ; H01L29/20
Abstract:
A device includes: (1) a boron arsenide substrate; and (2) an integrated circuit disposed in or over the boron arsenide substrate.
Public/Granted literature
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