Invention Grant
- Patent Title: SOI substrate and related methods
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Application No.: US17937918Application Date: 2022-10-04
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Publication No.: US11948880B2Publication Date: 2024-04-02
- Inventor: Mark Griswold , Michael J. Seddon
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agency: Adam R. Stephenson, LTD.
- The original application number of the division: US15961642 2018.04.24
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/02 ; H01L21/786 ; H01L23/12 ; H01L23/34 ; H01L23/522
Abstract:
Implementations of a silicon-on-insulator (SOI) die may include a silicon layer including a first side and a second side, and an insulative layer coupled directly to the second side of the silicon layer. The insulative layer may not be coupled to any other silicon layer.
Public/Granted literature
- US20230025410A1 SOI SUBSTRATE AND RELATED METHODS Public/Granted day:2023-01-26
Information query
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