Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US17370527Application Date: 2021-07-08
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Publication No.: US11948881B2Publication Date: 2024-04-02
- Inventor: Hsi-Kuei Cheng , Chih-Kang Han , Ching-Fu Chang , Hsin-Chieh Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US15410194 2017.01.19
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/48 ; H01L23/00 ; H01L23/31 ; H01L23/538 ; H01L23/498

Abstract:
A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.
Public/Granted literature
- US20210335708A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2021-10-28
Information query
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