According to one embodiment, a semiconductor memory device includes a stacked body, a pillar, a strip part, a plurality of first contacts, and a second contact. The stacked body includes a plurality of conductive layers stacked via an insulating layer, and includes, at each of opposite ends in a first direction, a first staircase part in which the conductive layers are terminated stepwise. The pillar extends in the stacked body in a stacking direction of the stacked body, and form memory cells at positions intersecting with at least some conductive layers of the plurality of conductive layers. The strip part divides the stacked body in the first direction by extending in a second direction crossing the first direction. The plurality of first contacts are arranged in the first staircase part, in which each of the first contacts is connected to one of the conductive layers at each step of the first staircase part. The second contact is arranged on the strip part side of the stacked body and is connected to an uppermost conductive layer of the plurality of conductive layers, the some conductive layers are connected to the memory cells and arranged in contact with the strip part, of the plurality of conductive layers.