Invention Grant
- Patent Title: Redistribution structure for semiconductor device and method of forming same
-
Application No.: US17099953Application Date: 2020-11-17
-
Publication No.: US11948918B2Publication Date: 2024-04-02
- Inventor: Po-Han Wang , Yu-Hsiang Hu , Hung-Jui Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/56 ; H01L23/00 ; H01L25/065

Abstract:
A semiconductor device having a redistribution structure and a method of forming the same are provided. A semiconductor device includes a semiconductor structure, a redistribution structure over and electrically coupled the semiconductor structure, and a connector over and electrically coupled to the redistribution structure. The redistribution structure includes a base via and stacked vias electrically interposed between the base via and the connector. The stacked vias are laterally spaced apart from the base via.
Public/Granted literature
- US20210391304A1 REDISTRIBUTION STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME Public/Granted day:2021-12-16
Information query
IPC分类: