Invention Grant
- Patent Title: Method of forming integrated circuit structure
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Application No.: US17989686Application Date: 2022-11-18
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Publication No.: US11948935B2Publication Date: 2024-04-02
- Inventor: Yung-Feng Chang , Bao-Ru Young , Tung-Heng Hsieh , Chun-Chia Hsu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- The original application number of the division: US16880939 2020.05.21
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G06F30/392 ; H01L21/82 ; H01L21/8238 ; H01L27/092

Abstract:
Provided is a tap cell including a substrate, a first well, a second well, a first doped region, and the second doped region. The substrate has a first region and a second region. The first well has a first dopant type and includes a first portion disposed in the first region and a second portion extending into the second region. The second well has a second dopant type and includes a third portion disposed in the second region and a fourth portion extending into the first region. The first doped region having the first dopant type is disposed in the second portion of the first well and the third portion of the second well along the second region. The second doped region having the second dopant type is disposed in the first portion of the first well and the fourth portion of the second well along the first region.
Public/Granted literature
- US20230082104A1 METHOD OF FORMING INTEGRATED CIRCUIT STRUCTURE Public/Granted day:2023-03-16
Information query
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