Invention Grant
- Patent Title: Wide spectrum multi-band detection structure with selective absorption enhancement and preparation method thereof
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Application No.: US17299315Application Date: 2019-11-23
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Publication No.: US11948951B2Publication Date: 2024-04-02
- Inventor: Huan Liu , Weiguo Liu , Yan An , Minyu Bai , Jun Han , Zhuoman Wang , Jiaxing Hu , Changlong Cai
- Applicant: Xi An Technological University
- Applicant Address: CN Xi An
- Assignee: Xi An Technological University
- Current Assignee: Xi An Technological University
- Current Assignee Address: CN Xi An
- Priority: CN 1910162591.5 2019.03.05
- International Application: PCT/CN2019/120446 2019.11.23
- International Announcement: WO2020/177401A 2020.09.10
- Date entered country: 2021-06-03
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
The invention relates to a wide spectrum multi-band detection structure with selective absorption enhancement and its preparation method. The structure comprises a plurality of sub-pixel units capable of detecting incident light in different bands. Each sub-pixel unit is composed of a square well-shaped microstructure array and a metal lower electrode (2), a photosensitive layer (3) and an upper electrode (4) on the surface thereof. The size and array spacing of square well-shaped microstructures in different sub-pixel units are determined according to the detection bands of the sub-pixel units where they are located. The upper openings of the square well-shaped microstructures are hollow to form a resonant cavity, and the adjacent square well-shaped microstructures in the same sub-pixel unit form a resonant cavity, thus solving the problem that the detector structure in the prior art cannot simultaneously realize visible light-near infrared multi-band absorption enhancement detection.
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