Invention Grant
- Patent Title: Polysilicon resistor
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Application No.: US17077329Application Date: 2020-10-22
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Publication No.: US11948967B2Publication Date: 2024-04-02
- Inventor: Ding Li , Shuai Du , Yixing Chu
- Applicant: HUAWEI TECHNOLOGIES CO., LTD.
- Applicant Address: CN Guangdong
- Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Guangdong
- Agency: WOMBLE BOND DICKINSON (US) LLP
- Priority: CN 1810380599.4 2018.04.25
- Main IPC: H01C7/00
- IPC: H01C7/00 ; H01C1/14 ; H01L49/02

Abstract:
A polysilicon resistor is disclosed, to reduce a voltage coefficient of the polysilicon resistor. The polysilicon resistor includes: a polysilicon layer (101), a voltage module (102), and a substrate layer (103), where the voltage module (102) is configured to transmit a voltage on the polysilicon layer (101) to the substrate layer (103).
Public/Granted literature
- US20210043720A1 POLYSILICON RESISTOR Public/Granted day:2021-02-11
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