Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the semiconductor device
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Application No.: US18119198Application Date: 2023-03-08
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Publication No.: US11948993B2Publication Date: 2024-04-02
- Inventor: Nam Jae Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR 20200097015 2020.08.03
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L29/78 ; H10B43/27
Abstract:
The present technology provides a semiconductor device. The semiconductor device includes a stack including insulating patterns and conductive patterns stacked alternately with each other, a channel layer including a first channel portion protruding out of the stack and a second channel portion in the stack, and passing through the stack, and a conductive line surrounding the first channel portion, and the first channel portion includes metal silicide.
Public/Granted literature
- US20230223457A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE Public/Granted day:2023-07-13
Information query
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