Invention Grant
- Patent Title: Semiconductor die and method of manufacturing the same
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Application No.: US17482481Application Date: 2021-09-23
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Publication No.: US11949009B2Publication Date: 2024-04-02
- Inventor: Stanislav Vitanov , Jyotshna Bhandari , Georg Ehrentraut , Christian Ranacher
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP 198987 2020.09.29
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/06 ; H01L29/40 ; H01L29/66
Abstract:
This application relates to semiconductor die including: a transistor device formed in an active area of a semiconductor body and having a channel region, a gate region, and a field electrode region, the gate region arranged laterally aside the channel region and having a gate electrode for controlling a current flow in the channel region, the gate electrode formed in a gate trench extending into the semiconductor body; and an additional device formed in an additional device area of the semiconductor body. A recess extends into the semiconductor body in the additional device area, and a semiconductor material is arranged in the recess in which the additional device is formed.
Public/Granted literature
- US20220102548A1 SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-03-31
Information query
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